HETEROGENEOUS MATERIAL AND TECHNOLOGICAL PLATFORM FOR A NEW DOMAIN OF POWER NANOELECTRONICS

The SMARTWAY consortium is made up from 5 partners from 4 European countries (France, Germany, Belgium, Romania) with a wide enough geographical spread. The partners are:

  • 1 major industrial global players: Thales Research & Technology (France)
  • 3 SMEs: TAIPRO Engineering SA (Belgium), indie Semiconductor (Germany) and Innovations for High Performance Microelectronics (Germany)
  • 1 academic institutions National Institute for Research and Development in Micro Technologies (Romania):

THALES SA

General Partner description: THALES Research & Technology is composed by 5 research centres located in France, UK, The Netherlands, Singapore,...

Taipro Engineering, Belgium

General Partner description: TAIPRO Engineering’s target market is the tailored microsystems (smart sensors). Its goal is to give a high-level...

National Institute for Research and Development in Micro Technologies (IMT)

General Partner description: IMT-Bucharest, coordinated by the Romanian Ministry of Education and Research, is the first institute with this profile...

Innovations for high performance microelectronics / Leibnitz Institut fuer innovative mikroelectronik

General Partner description: IHP GmbH is a public funded German research institute located in Frankfurt (Oder) in Germany. With 350...

Indie Semiconductor FFO GmbH, Germany

General Partner description: Indie Semiconductor is a technology-oriented company that gains a competitive advantage through the application of advanced and...

Smartway Coordinator

Dr. Afshin Ziaei

The Smartway project is funded by HORIZON-EIC-2022-TRANSITION-01 under the grant agreement 101103057

About Smartway

To tackle the problems arisen from the fact that “current digital technologies are gradually reaching the limits of performance and miniaturization while consuming higher and higher amounts of energy”, SMARTWAY proposes novel architectures based on new paradigms that exhibit a significant decrease in energy consumption while improving on speed/performance and miniaturization. The disruptive nature of the targeted approach relies on a progress towards the wafer-scale integration of 2D materials, MMs, and CNTs into radar sensor suitable for IoT sensing applications at both millimeter-waves (i.e., 24–60GHz) and THz frequencies (i.e., 240–300GHz).
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